The patented Augmented Turn-Off (ATOff™) switching technique addresses two significant impediments to the successful implementation of Silicon Carbide modules in high-power applications. By reducing both turn-off spikes and ringing both under normal operation as well as short-circuit conditions (DSAT), SiC MOSFET modules can be operated in the higher frequencies that enable dramatic increases in power conversion density.
A whitepaper describing this technology and test results can be found here.
Patent No. 9,490,798
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