Increased Silicon Carbide (SiC) efficiencies using Two-Level Turn-Off

Switching an SiC MOSFET Power Module creates two significant problems that need to be addressed to optimize the performance of the device: turn-off spikes and ringing.  These two parasitic problems need to be controlled while maintaining efficient switching. AgileSwitch has developed a patent-pending line of programmable Gate Drive Boards (GDBs) that address these problems, controlling the turn-off di/dt by varying the gate voltage level and dwell time to an intermediate level during turn-off. This process is typically referred to as Two-Level Turn-Off or 2LTO, while having more than one intermediate step is referred to as Multi-Level Turn-Off or MLTO.

In addition, AgileSwitch software configurable GDBs report out 7 unique fault conditions along with Temperature and DC Link Voltage. The combination of these effects will help drive growth in adoption of SiC devices, and the inverters that they support.

Download your copy today. Follow this link: Effect of Two-Level Turn-Off on Silicon Carbide Module Performance